complementary plastic silicon power transistors . . . designed for low power audio amplifier and low current, high speed switching applications. ? collectoremitter sustaining voltage e v ceo(sus) = 60 vdc e mje171, mje181 = 80 vdc e mje172, mje182 ? dc current gain e h fe = 30 (min) @ i c = 0.5 adc = 12 (min) @ i c = 1.5 adc ? currentgain e bandwidth product e f t = 50 mhz (min) @ i c = 100 madc ? annular construction for low leakages e i cbo = 100 na (max) @ rated v cb ??????????????????????? ??????????????????????? maximum ratings ???????????? ? ?????????? ? ???????????? rating ???? ? ?? ? ???? symbol ???? ? ?? ? ???? mje171 mje181 ???? ? ?? ? ???? mje172 mje182 ??? ? ? ? ??? unit ???????????? collectorbase voltage ???? v cb ???? 80 ???? 100 ??? vdc ???????????? ???????????? collectoremitter voltage ???? ???? v ceo ???? ???? 60 ???? ???? 80 ??? ??? vdc ???????????? ???????????? emitterbase voltage ???? ???? v eb ??????? ??????? 7.0 ??? ??? vdc ???????????? ? ?????????? ? ???????????? collector current e continuous peak ???? ? ?? ? ???? i c ??????? ? ????? ? ??????? 3.0 6.0 ??? ? ? ? ??? adc ???????????? base current ???? i b ??????? 1.0 ??? adc ???????????? ? ?????????? ? ???????????? total power dissipation @ t a = 25 c derate above 25 c ???? ? ?? ? ???? p d ??????? ? ????? ? ??????? 1.5 0.012 ??? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? total power dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? p d ??????? ? ????? ? 12.5 0.1 ??? ? ? ? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ??????? ? ????? ? ??????? 65 to +150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ???? ???? symbol ??????? ??????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ???? ???? q jc ??????? ??????? 10 ??? ??? c/w ???????????? ???????????? thermal resistance, junction to ambient ???? ???? q ja ??????? ??????? 83.4 ??? ??? c/w preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 5 1 publication order number: mje171/d mje171 mje172 mje181 mje182 *on semiconductor preferred device 3 ampere power transistors complementary silicon 6080 volts 12.5 watts * pnp npn * * * case 7709 to225aa 3 2 1 style 1: pin 1. emitter 2. collector 3. base
mje171 mje172 mje181 mje182 http://onsemi.com 2 14 20 figure 1. power derating t, temperature ( c) 0 40 60 100 120 160 10 8.0 t c 6.0 12 p d , power dissipation (watts) 2.8 0 2.0 1.6 t a 1.2 2.4 4.0 0.8 2.0 0.4 80 140 t c t a ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (i c = 10 madc, i b = 0) mje171, mje181 mje172, mje182 ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 60 80 ???? ? ?? ? ???? e e ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 80 vdc, i e = 0) mje171, mje181 (v cb = 100 vdc, i e = 0) mje172, mje182 (v cb = 80 vdc, i e = 0, t c = 150 c) mje171, mje181 (v cb = 100 vdc, i e = 0, t c = 150 c) mje172, mje182 ????? ? ??? ? ? ??? ? ? ??? ? ????? i cbo ??? ? ? ? ? ? ? ? ? ? ??? e e e e ???? ? ?? ? ? ?? ? ? ?? ? ???? 0.1 0.1 0.1 0.1 ??? ? ? ? ? ? ? ? ? ? ??? m adc madc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter cutoff current (v be = 7.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? e ???? ? ?? ? ???? 0.1 ??? ? ? ? ??? m adc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 100 madc, v ce = 1.0 vdc) (i c = 500 madc, v ce = 1.0 vdc) (i c = 1.5 adc, v ce = 1.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 50 30 12 ???? ? ?? ? ? ?? ? ???? 250 e e ??? ? ? ? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 500 madc, i b = 50 madc) (i c = 1.5 adc, i b = 150 madc) (i c = 3.0 adc, i b = 600 madc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 0.3 0.9 1.7 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter saturation voltage (i c = 1.5 adc, i b = 150 madc) (i c = 3.0 adc, i b = 600 madc) ????? ? ??? ? ????? v be(sat) ??? ? ? ? ??? e e ???? ? ?? ? ???? 1.5 2.0 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (i c = 500 madc, v ce = 1.0 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e ???? ? ?? ? ???? 1.2 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? currentgain e bandwidth product (1) (i c = 100 madc, v ce = 10 vdc, f test = 10 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 50 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz ?????????????????????? ? ???????????????????? ? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) mje171/mje172 mje181/mje182 ????? ? ??? ? ????? c ob ??? ? ? ? ??? e e ???? ? ?? ? ???? 60 40 ??? ? ? ? ??? pf (1) f t = ? h fe ?? f test .
mje171 mje172 mje181 mje182 http://onsemi.com 3 figure 2. switching time test circuit +11 v 25 m s 0 -9.0 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1.0% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma for pnp test circuit, reverse all polarities. 1k i c , collector current (amps) v ce = 30 v i c /i b = 10 v be(off) = 4.0 v t j = 25 c t, time (ns) 500 300 200 100 50 t d 30 20 10 5 1 0.01 0.03 0.05 0.5 0.2 0.1 0.3 10 figure 3. turnon time 3 2 5 2 13 t r npn mje181/182 pnp mje171/172 0.02 t, time (ms) 0.01 0.02 0.05 1.0 2.0 5.0 10 20 50 100 200 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), transient thermal q jc (t) = r(t) q jc q jc = 10 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 resistance (normalized) figure 4. thermal response 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.1 0.02 0.01 0 (single pulse)
mje171 mje172 mje181 mje182 http://onsemi.com 4 10 v ce , collector-emitter voltage (volts) 0.01 30 2.0 5.0 0.1 bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited curves apply below rated v ceo figure 5. mje171, mje172 500 m s 5.0ms dc 1.0 20 10 50 5.0 3.0 2.0 1.0 100 100 m s t j = 150 c i c , collector current (amp) v ce , collector-emitter voltage (volts) 0.01 figure 6. mje181, mje182 i c , collector current (amp) mje171 mje172 0.02 0.05 0.2 0.5 30 20 10 50 5.0 3.0 2.0 1.0 100 10 2.0 5.0 0.1 1.0 0.02 0.05 0.2 0.5 70 100 m s 500 m s 5.0ms dc mje181 mje182 bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited curves apply below rated v ceo t j = 150 c 7.0 activeregion safe operating area there are two limitations on the power handling ability of a transistor e average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figures 5 and 6 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure4. at high case temperature, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10k i c , collector current (amps) 10 5k 3k 2k 1k 500 300 200 100 50 figure 7. turnoff time t, time (ns) 30 20 0.01 0.03 0.05 0.5 0.2 0.02 0.1 0.3 10 5 2 13 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f v r , reverse voltage (volts) 10 50 70 100 30 figure 8. capacitance 50 20 10 5.0 3.0 2.0 1.0 0.5 c, capacitance (pf) 0.7 t j = 25 c c ib c ob npn mje181/182 pnp mje171/172 pnp mje171/mje172 npn mje181/mje182 20 30 7.0
mje171 mje172 mje181 mje182 http://onsemi.com 5 package dimensions case 7709 issue w to225aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. b a m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 --- 1.02 --- style 1: pin 1. emitter 2. collector 3. base
mje171 mje172 mje181 mje182 http://onsemi.com 6 notes
mje171 mje172 mje181 mje182 http://onsemi.com 7 notes
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